feb.1999 outline drawing & circuit diagram dimensions in mm application inverters, servo drives, dc motor controllers, cvcf, nc equipment, welders QM100TX1-H ? i c collector current ........................ 100a ? v cex collector-emitter voltage ........... 600v ? h fe dc current gain............................... 80 ? insulated type ? ul recognized yellow card no. e80276 (n) file no. e80271 mitsubishi transistor modules QM100TX1-H high power switching use insulated type 68 8 86 74 0.25 62.5 ?.2 0 14 14 10.5 4 f 5.4 0.1 (10) 18.5 18.5 18.5 18.5 (10) 80 0.25 94 20 20 11?4 b1 b2 u b3 b4 v b5 b6 w (n) (p)+ 10 7 4 2 13 13 24.8 26 28.2max. b1 b2 b3 b4 u b5 b6 v p (+) w n (? label
feb.1999 symbol v cex (sus) v cex v cbo v ebo i c Ci c p c i b Ci csm t j t stg v iso parameter collector-emitter voltage collector-emitter voltage collector-base voltage emitter-base voltage collector current collector reverse current collector dissipation base current surge collector reverse current (forward diode current) junction temperature storage temperature isolation voltage mounting torque weight ratings 600 600 600 7 100 75 350 5 750 C40~+150 C40~+125 2500 0.98~1.47 10~15 1.47~1.96 15~20 520 conditions i c =1a, v eb =2v v eb =2v emitter open collector open dc dc (forward diode current) t c =25 c dc peak value of one cycle of 60hz (half wave) charged part to case, ac for 1 minute main terminal screw m4 mounting screw m5 typical value absolute maximum ratings (tj=25 c, unless otherwise noted) unit v v v v a a w a a c c v nm kgcm nm kgcm g mitsubishi transistor modules QM100TX1-H high power switching use insulated type electrical characteristics (tj=25 c, unless otherwise noted) unit ma ma ma v v v m s m s m s c/w c/w c/w limits min. 80 symbol i cex i cbo i ebo v ce (sat) v be (sat) Cv ceo h fe t on t s t f r th (j-c) q r th (j-c) r r th (c-f) parameter collector cutoff current collector cutoff current emitter cutoff current collector-emitter saturation voltage base-emitter saturation voltage collector-emitter reverse voltage dc current gain switching time thermal resistance (junction to case) contact thermal resistance (case to fin) test conditions v ce =600v, v eb =2v v cb =600v, emitter open v eb =7v, collector open i c =100a, i b =3a Ci c =100a (diode forward voltage) i c =100a, v ce =5v v cc =300v, i c =100a, i b1 =Ci b2 =3a transistor part (per 1/6 module) diode part (per 1/6 module) conductive grease applied (per 1/6 module) typ. max. 1.0 1.0 200 2.0 2.7 1.7 2.0 12 4.0 0.35 1.3 0.2
feb.1999 ? 10 ? 10 ? 10 ? 10 0 10 1 10 7 5 3 2 7 5 3 2 1.0 1.4 1.8 2.2 2.6 3.0 v ce =2v t j =25? 0 10 1 10 7 5 3 2 7 5 3 2 0 1 2 3 4 5 t j =25? t j =125? i c =70a i c =100a 200 160 120 80 40 0 01 23 4 5 i b = 5a 4a 3a 2a 1a 0.6a 0.4a 0.2a 1 10 2 10 7 5 3 2 23 57 1 10 3 10 7 5 3 2 2 23 57 2 10 23 t j =25? t j =125? v ce =5.0v 1 10 7 5 3 2 0 10 7 5 3 2 23 57 1 10 23 57 2 10 2 v be(sat) v ce(sat) i b =3.0a t j =25? t j =125? 0 10 7 5 3 2 1 10 7 5 3 2 2 23 57 1 10 23 57 2 10 2 t j =25? t j =125? v cc =300v i b1 =i b2 =3.0a t on t s t f performance curves common emitter output characteristics (typical) common emitter input characteristic (typical) saturation voltage characteristics (typical) collector-emitter saturation voltage (typical) switching time vs. collector current (typical) dc current gain vs. collector current (typical) collector current i c (a) dc current gain h fe collector-emitter voltage v ce (v) collector current i c (a) base current i b (a) collector-emitter saturation voltage v ce (sat) (v) saturation voltage v ce (sat) , v be (sat) (v) switching time t on , t s , t f ( m s) collector current i c (a) base-emitter voltage v be (v) base current i b (a) collector current i c (a) mitsubishi transistor modules QM100TX1-H high power switching use insulated type
feb.1999 0 10 0 10 1 10 ? 10 ? 10 ? 10 3 10 2 10 1 10 3 10 2 10 1 10 0 10 0 10 ? 10 100 80 60 40 20 0 0 20 60 100 120 160 40 80 140 10 30 50 70 90 2 10 1 10 7 5 4 3 2 0 10 7 5 4 3 2 0 0.4 0.8 1.2 1.6 2.0 t j =25? t j =125? ? 10 357 0 10 23 57 1 10 2 0 10 7 5 3 2 1 10 7 5 3 2 2 t s t j =25? t j =125? i b1 =3.0a v cc =300v i c =100a t f 200 0 0 500 400 300 200 100 20 600 800 40 60 80 100 120 140 160 180 700 i b2 =?a 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 t c =25? non?epetitive 50? 100? 10ms 1ms dc 7 5 3 2 7 5 3 2 7 5 3 2 0.1 0.2 0.3 0.4 0.5 0 3 2 7 5 3 2 4 4 4 4 collector dissipation second breakdown area switching time vs. base current (typical) reverse bias safe operating area switching time t s , t f ( m s) collector-emitter voltage v ce (v) base reverse current Ci b2 (a) forward bias safe operating area derating factor of f. b. s. o. a. collector-emitter voltage v ce (v) case temperature t c ( c) reverse collector current vs. collector-emitter reverse voltage (diode forward characteristics) (typical) transient thermal impedance characteristic (transistor) collector-emitter reverse voltage Cv ceo (v) time (s) collector current i c (a) collector current i c (a) derating factor (%) collector reverse current Ci c (a) mitsubishi transistor modules QM100TX1-H high power switching use insulated type z th (jCc) ( c/ w)
feb.1999 0 10 ? 10 ? 10 ? 10 0 10 1 10 1 10 0 10 ? 10 2 10 7 5 4 3 2 1 10 7 5 4 3 2 0 10 0 10 23457 1 10 23457 2 10 t j =25? t j =125? v cc =300v i b1 =? b2 =1.5a i rr q rr t rr 2 10 1 10 7 5 4 3 2 0 10 7 5 4 3 2 0 100 800 200 300 400 500 600 700 7 5 7 5 3 2 7 5 3 2 7 5 3 2 0.4 0.8 1.2 1.6 2.0 0 3 2 7 5 3 2 4 4 4 4 4 i rr (a), q rr ( m c) surge collector reverse current Ci csm (a) transient thermal impedance characteristic (diode) rated surge collector reverse current (diode forward surge current) reverse recovery characteristics of free-wheel diode (typical) conduction time (cycles at 60hz) forward current i f (a) time (s) mitsubishi transistor modules QM100TX1-H high power switching use insulated type z th (jCc) ( c/ w) t rr ( m s)
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